? 2005 ixys all rights reserved v ces = 900 v i c25 = 64 a v ce(sat) = 2.7 v t fi typ = 150 ns symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v ge(th) i c = 250 ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces 300 a v ge = 0 v t j = 150c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v 2.2 2.7 v t j = 125c 2.1 v symbol test conditions maximum ratings v ces t j = 25c to 150c 900 v v cgr t j = 25c to 150c; r ge = 1 mw 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 64 a i c110 t c = 110c 32 a i cm t c = 25c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125c, r g = 10 i cm = 64 a (rbsoa) clamped inductive load: v cl < 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ds99392(12/05) g = gate c = collector e = emitter tab = collector features ? high frequency igbt ? high current handling capability ? mos gate turn-on - drive simplicity applications ? pfc circuits ? uninterruptible power supplies (ups) ? switched-mode and resonant-mode power supplies ? ac motor speed control ? dc servo and robot drives ? dc choppers advantages ? high power density ? very fast switching speeds for high frequency applications hiperfast tm igbt with fast diode ixgh 32n90b2d1 ixgt 32n90b2d1 to-268 (ixgt) c (tab) c (tab) g c e to-247 (ixgh) e g b2-class high speed igbts with ultrafast diode advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2d1 ixgt 32n90b2d1 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10 v 18 28 s pulse test, t < 300 s, duty cycle < 2 % c ies 1790 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 146 pf c res 49 pf q g 89 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 15 nc q gc 34 nc t d(on) 20 ns t ri 22 ns t d(off) 260 400 ns t fi 150 ns e off 2.2 4.5 mj t d(on) 20 ns t ri 22 ns e on 3.8 mj t d(off) 360 ns t fi 330 ns e off 5.75 mj r thjc 0.42 k/w r thcs (to-247) 0.25 k/w inductive load, t j = 25c i c = i c110 , v ge = 15 v v ce = 720 v, r g = r off = 5 inductive load, t j = 125c i c = i c110 a, v ge = 15 v v ce = 720 v, r g = r off = 5 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline ultrafast diode symbol conditions maximum ratings i f110 t c = 110c 27 a symbol conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30 a; 2.75 v t vj = 125c 1.9 v i rm i f = 50 a; di f /dt = -100 a/ s; t vj = 100c 5.5 11.4 a t rr v r = 100 v; v ge = 0 v 190 ns r thjc 0.9 k/w r thcs 0.25 k/w ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved ixgh 32n90b2d1 ixgt 32n90b2d1 fig. 2. extended output characteristics @ 25 o c 0 40 80 120 160 200 240 02468101214161820 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 00.511.522.533.544.5 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 32a i c = 16a v ge = 15v i c = 64a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25 o c i c = 64a 32a 16a fig. 6. input admittance 0 20 40 60 80 100 120 140 45 678 910 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2d1 ixgt 32n90b2d1 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 20 40 60 80 100 i c - amperes g f s - siemens t j = -40 o c 25 o c 12 5 o c fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v g e - volts v ce = 450v i c = 32a i g = 1 0ma fig. 9. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 10. reverse-bias safe ope r ating ar e a 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 v c e - volts i c - amperes t j = 125 o c r g = 10 dv/dt < 10v/ns fig. 11. maxim um transient therm al resistance 0.01 0.1 1 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
? 2005 ixys all rights reserved ixgh 32n90b2d1 ixgt 32n90b2d1 fig. 14. dependence of turn-off energy loss on collector current 0 2 4 6 8 10 12 14 16 10 20 30 40 50 60 70 i c - amperes e o f f - millijoules r g = 5 v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 16. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 16 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoule s i c = 64a r g = 5 v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 12. dependence of turn-off energy loss on gate resistance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e o f f - millijoules i c = 64a t j = 125 o c v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 13. dependence of turn-on energy loss on gate resistance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e o n - millijoule s i c = 64a t j = 125 o c v ge = 15v v ce = 720v i c = 32a i c = 16a fig. 15. dependence of turn-on energy loss on collector current 0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 i c - amperes e o n - millijoules r g = 5 v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 17. dependence of turn-on energy loss on temperature 0 1 2 3 4 5 6 7 8 9 10 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o n - millijoules i c = 64a r g = 5 ? v ge = 15v v ce = 720v i c = 32a i c = 16a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 32n90b2d1 ixgt 32n90b2d1 fig. 18. dependence of turn-off switching time on gate resistance 350 375 400 425 450 475 500 525 550 4 6 810121 4161820 r g - ohms t d ( o f f ) - nanoseconds 320 330 340 350 360 370 380 390 400 t f i - nanoseconds t d( off) t fi - - - - - t j = 125oc, v ge = 15v v ce = 720v i c = 32a, 16a i c = 16a, 32a, 64a fig. 20. dependence of turn-off sw itching time on collector current 100 150 200 250 300 350 400 450 500 15 20 25 30 35 40 45 50 55 60 65 i c - amperes t d ( o f f ) / t f i - nanoseconds t d(off) t fi - - - - - r g = 5 , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 22. dependence of turn-off switching time on temperature 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t d ( o f f ) / t f i - nanoseconds t d( off) t fi - - - - - r g = 5 , v ge = 15v v ce = 720v i c = 64a, 32a, 16a i c = 64a, 32a, 16a fig. 19. dependence of turn-on switching time on gate resistance 1 5 20 25 30 35 40 45 4681 01214161 820 r g - ohms t d ( o n ) - nanoseconds 0 30 60 90 1 20 1 50 1 80 t r i - nanoseconds t d(on) t ri - - - - - t j = 125oc, v ge = 15v v ce = 720v i c = 32a i c = 16a i c = 64a fig. 21. dependence of turn-on sw itching time on collector current 10 12 14 16 18 20 22 24 26 28 30 10 20 30 40 50 60 70 i c - amperes t d ( o n ) - nanoseconds 0 10 20 30 40 50 60 70 80 90 10 0 t r i - nanoseconds t d( on) t ri - - - - r g = 5 , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 23. dependence of turn-on switching time on temperature 10 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t d ( o n ) - nanoseconds 0 25 50 75 10 0 12 5 15 0 t r i - nanoseconds t d( on) t ri - - - - - r g = 5 , v ge = 15v v ce = 720v i c = 32a i c = 64a i c = 1 6a
? 2005 ixys all rights reserved fig. 26. peak reverse current i rm versus -di f /dt fig. 25. reverse recovery charge q r versus -di f /dt fig. 24. forward current i f versus v f q r i rm fig. 27. dynamic parameters q r , i rm versus t vj fig. 28. recovery time t rr versus -di f /dt fig. 29. peak forward voltage v fr and t fr versus di f /dt t fr v fr fig. 30. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.465 0.0052 2 0.179 0.0003 3 0.256 0.0397 t vj = 100c v r = 600v i f = 60a i f = 30a i f =15a t vj = 100c i f = 30a i f = 60a i f = 30a i f =15a t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c ultrafast diode charateristic curves 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c a/ s a/ s t rr ns t fr z thjc a/ s s 2 ixgh 32n90b2d1 ixgt 32n90b2d1
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